Tuesday, 9 September 2014

IGBT and Super Junction MOSFET Market Trends 2013 - 2019

The IGBT and super junction MOSFET industry will benefit greatly through the increasing demand for consumer electronics and industrial applications. The market is set to grow at a CAGR of 11.6 percent between 2012 and 2019. The market was pegged at $4,776.2 in 2012, and will rise to $10,000 million by 2019.

Read through the content details, browse the ToC, and purchase the IGBT and super junction MOSFET market report at: http://www.transparencymarketresearch.com/igbt-super-junction-mosfet.html.
A market report titled “IGBT and Super Junction MOSFET Market - Global Industry Analysis, Size, Share, Growth, Trends and Forecast, 2013 – 2019”, states the various causes and factors of growth in the related sector. It divides the market according to application and type of semiconductor used.

The report puts the industrial applications sector to be the strongest IGBT and super junction MOSFET market, followed by the motor drives sector. The Electric and Hybrid Electric Vehicles (EV/HEV) application is one of the fastest-growing sectors in this market. IGBTs are at a CAGR of 21.1 percent, and super junction MOSFETs at 30 percent, between 2014 and 2019. The discrete and module semiconductors are driven by their application industries such as UPS, PV inverter, and industrial applications.

The market report further elaborates the areas of improvement in IGBTs and super junction MOSFETs. It states that the prime methods of boosting usage and sales are by improving their switching efficiency, and to restructure the semiconductors to be applicable in upcoming electronic architecture. It takes into account current structural properties, such as the super junction MOSFET being more compact, and the IGBT being more cost effective and efficient at higher currents.

Competition and Dominance in the Global IGBT and Super Junction MOSFET Market
The key companies in the global market have been Mitsubishi Electric Corporation and Infineon Technologies AG. Mitsubishi Electric Corporation has been the market leader for IGBTs in 2012, while Infineon Technologies AG was leading in MOSFETs.

Other competitors in the global IGBT and super junction MOSFET market include Hitachi Power Semiconductor Device Limited, Toshiba Corporation, Fairchild Semiconductor International Incorporated, Semikron Incorporated, Fuji Electric Corporation Limited, and Vishay Intertechnology Incorporated. The research report pinpoints Asia Pacific as being the biggest regional avenue for growth in this market. Progress will be led by China, followed by Japan.

The research procedure incorporates Porter’s Five Point Analysis to assess the market situation and uses it to construct suitable methods of expansion. It also dissects the IGBT market share from the super junction MOSFET share, giving a detailed view over which technology is showing greater promise.

This report provides you with the most detailed analyses about the particular semiconductor market, elaborating global and regional strategies for future endeavors, based on current facts and predictions.

IGBT and Super Junction MOSFET Market, By Product Type
Discrete IGBT
IGBT module
Super junction MOSFET
Discrete super junction MOSFET
Super junction MOSFET module

IGBT and Super Junction MOSFET Market, By Application
Uninterrupted power supply (UPS)
Wind turbines
Photovoltaic (PV) inverter
Rail traction
Consumer applications
Electric vehicles/hybrid electric vehicles (EV/HEV)
Motor drives
Industrial applications
Converters, adapters and chargers
Others (servers, telecom and networking devices, etc.)

IGBT and Super Junction MOSFET Market, By Geography

North America
Asia Pacific
Rest of the World (RoW)

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