The market was
valued at USD 379.82 million in 2012, which is expected to reach USD
2,203.73 million by 2019, growing at a CAGR of 24.6% from 2013 to
2019. North America was the largest contributor to global GaN
semiconductor devices market accounting for 32.1% of the overall GaN
semiconductors devices market in 2012. Asia Pacific is expected to be
the fastest growing market for GaN semiconductor devices during the
forecast period, growing at a CAGR of 27.7% from 2013 to 2019. This
is mainly due to the rapid growth in the electronic industry in Asia
Pacific.
Browse GaN
Semiconductor Devices Market Report with Full TOC at
http://www.transparencymarketresearch.com/gallium-nitride.html
The growing demand
for high speed, high temperature and power handling capabilities have
made the semiconductor industry rethink upon the designs and
materials used in semiconductors. As various faster and smaller
computing devices are coming forth, the use of silicon in
semiconductors is making it difficult to sustain Moore's Law. Owing
to the unique characteristics of GaN such as superior noise factor,
high maximum current, high breakdown voltage, and high oscillation
frequency, GaN poses to be a unique material of choice for numerous
applications such as military, aerospace and defense sector,
automotive sector and high power applications such as industrial,
solar, power and wind . GaN is power efficient as it requires less
heat sink compared to silicon. Growing application areas as well as
increased demand from military is the major driving force for the
growth of GaN semiconductor devices market. The increase in demand is
mainly due to significant reduction in weight and size of devices
obtained by usage of GaN. In addition, developments in improving the
breakdown voltage of GaN are expected to boost the usage of GaN in
the field of electro-mobility.
In 2012, opto
semiconductor was the major product type and accounted for 96.6% of
the global GaN semiconductor device market. This was mainly due to
adoption of GaN opto semiconductors in military, aerospace, defense
and consumer electronics sector. However power semiconductor segment
is expected to grow at the fastest rate during the forecast period.
This is mainly due to growing need of high power devices for
industrial applications.
Among different
applications, military, defense and aerospace sector held the highest
market share and was valued at USD 81.68 million in 2012. Consumer
electronics was the second largest application segment followed by
ICT and automotive sector. With the introduction of 4G network, the
demand for high power transistors and base stations is expected to
rise. Hence the demand for GaN power semiconductors in ICT is
expected to grow at the fastest pace. North America was the market
leader in 2012, followed by Europe, Asia Pacific and RoW..
The global Photonic
IC market is highly fragmented and competitive. Major industry
participants include Fujitsu Limited (Japan), GaN Systems Inc
(Canada), Freescale Semiconductors Incorporated (U.S.), International
Rectifier Corporation (U.S.), Cree Inc (U.S.), Nichia Corporation
(Japan) and RF Micro Devices Inc. (U.S.) among others.
GaN Semiconductor
Device Market, by product type
Power
semiconductors
Schottky
Diode
Metal Oxide
Semiconductor Field Effect Transistor (MOSFETs)
High
Electron Mobility Transistors (HEMTs)
Others
(Rectifiers, other advanced transistor types)
Opto
semiconductors
Light
Emitting Diodes
Laser Diodes
GaN Semiconductor
Device Market, by application
Computer Sector
ICT Sector
Automotive
Sector
Military,
Aerospace and Defense
Consumer
Electronics
Medical
Others
GaN Semiconductor
Device Market, by geography
North America
Europe
Asia Pacific
RoW
Browse all
Semiconductor & Electronics Market Research Reports @
http://www.transparencymarketresearch.com/semiconductor-market-reports-5.html
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